23–28 Aug 2026
IBS Science Culture Center
Asia/Seoul timezone

Effects of Charge-State Fluctuations and δ-Ray Production on the Energy Resolution of Ionization Chambers Compared with Geant4 Simulations

Not scheduled
15m
Auditorium, 2nd floor (IBS Science Culture Center)

Auditorium, 2nd floor

IBS Science Culture Center

Speaker

YI HE (Tokyo City University)

Description

Ionization chambers are widely used for particle identification of heavy ions
through energy-deposit measurements. In the TRIP-S3CAN 2025 experimental
campaign at the RIBF facility at RIKEN, four ionization chambers were used to
determine the atomic number Z by measuring energy deposition in gas for a wide
range of heavy ions. Previous performance studies suggested that the Z resolution
can be affected by charge-state fluctuations within the ionization chambers and
motivating further investigation on charge-state fluctuations is needed. Therefore, in this study, we investigate the effects of charge-state fluctuations
using Geant4 simulations. We focus on their effects on δ-ray production and
energy-deposit straggling and evaluate how these processes affect energy-deposit
resolution. By comparing experimental data from our previous measurements with
simulation results, we aim to clarify how charge-state fluctuations and δ-ray
production influence the energy-deposit and its fluctuations in ionization chambers. Preliminary results show that the Geant4 simulations incorporating charge-state
fluctuations reproduce the degradation of the energy-deposit resolution observed in
our previous experimental data. This agreement suggests that charge-state
fluctuations play an important role in determining the energy-deposit resolution of
ionization chambers.

Authors

Mr DAIKI NISHIMURA (Tokyo City University) YI HE (Tokyo City University)

Co-authors

A. Ozawa A. Yano C. Inoue D. Nagae F. Sato G. Takayama H. Baba H. Kobayashi H. Suzuki H. Takeda I. Yasuda K. Adachi K. Kusaka K. Maeda K. Matsuyama K. Tezuka K. Watanabe K. Yasuda M. Fukuda M. Fukutome M. Mihara M. Mikawa M. Mitsui M. Ohtake M. Tanaka M. Yoshimoto N Kobayashi N. Fukuda R. Kageyama R. Sasamori R. Taguchi S. Endo S. Ishitani S. Michimasa S. Nishizawa S. Santonastaso S. Takeshige T. Moriguchi T. Ohtsubo T. Shimamura T. Suzuki T. Yamaguchi W. Yu Y. Ichinohe Y. Kikuchi Y. Shimizu Y. Togano Y. Yanagisawa

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